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AH1
High Dynamic Range Amplifier
Product Features
x x x x x x 250 - 4000 MHz +41 dBm OIP3 3 dB Noise Figure 13.5 dB Gain +22 dBm P1dB Lead-free/Green/RoHS-compliant SOT-89 Package x Single +5 V Supply x MTTF > 100 years
Product Description
The AH1 is a high dynamic range amplifier in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb quality to maintain MTTF values exceeding 100 years at mounting temperatures of +85 qC. The AH1 is available in the environmentally-friendly lead-free/green/RoHS-compliant SOT-89 package. The broadband amplifier uses a high reliability GaAs MMIC technology and is targeted for applications where high linearity is required. It is well suited for various current and next generation wireless technologies such as GPRS, GSM, CDMA, and W-CDMA. In addition, the AH1 will work for other applications within the 250 to 4000 MHz frequency range such as fixed wireless, WLAN, and WiBro.
Functional Diagram
GND 4
1 RF IN
2 GND
3 RF OUT
Applications
x x x x x x Mobile Infrastructure CATV / DBS W-LAN / Wi-Bro / WiMAX RFID Defense / Homeland Security Fixed Wireless
Function Input Output/Bias Ground
Pin No. 1 3 2, 4
Specifications (1)
Parameter
Operational Bandwidth Test Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (2) Noise Figure (3) Operating Current Range Supply Voltage
Typical Performance (4)
Units
MHz MHz dB dB dB dBm dBm dB mA V
Min
250 12.4
Typ
800 13.5 8 15 +21.7 +41 3.0 150 5
Max
4000
Parameter
Frequency S21 S11 S22 Output P1dB Output IP3 (2) IS-95 Channel Power (5) Noise Figure Supply Voltage Device Current
Units
MHz dB dB dB dBm dBm dB dB V mA 900 14.2 -21 -14 +21.7 +42 +15.5 3.2
Typical
1900 12.2 -14 -13 +22 +41 +16.5 3.3 5 150 2140 12.0 -21 -11 +22 +40 3.3
+37 120
180
1. Test conditions unless otherwise noted: T = 25 C, 50 system. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. Noise figure can be optimized by matching the input for optimal return loss.
:
4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3. 5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature Supply Voltage RF Input Power (continuous) Junction Temperature -40 to +85 qC -55 to +150 qC +6 V +10 dBm +220 qC
Rating
Ordering Information
Part No.
AH1-G AH1-PCB
Description
High Dynamic Range Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
0.8 - 2.5 GHz Fully Assembled Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice. WJ Communications, Inc
x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x
Web site: www.wj.com
Page 1 of 5 April 2007
AH1
High Dynamic Range Amplifier
S-Parameters (VDS = +5 V, IDS = 150 mA, T = 25 qC, unmatched device in a 50 ohm system) Input return loss can be improved with the appropriate input matching network shown later in this datasheet.
Gain vs. Output Power Output IP3 vs. Output Power
Typical Device Data
14 13 12 11 10 9 0 5 10 Output Power (dBm)
Gain vs. Frequency 100% Idss 75% Idss 50% Idss
45 40 35 30
100% Idss
900 MHz
OIP3 Load Pull Circles 900 MHz
IP3=35 IP3=36 IP3=37 IP3=38 IP3=39 IP3=41
25 20
75% Idss 50% Idss
15
20
0
5
10 Output Power (dBm)
15
20
VSWR=1.5 VSWR=2 VSWR=3 VSWR=4 VSWR=5
Return Loss vs. Frequency
20 15
0 -5 -10
w/o Matching Circuitry
10 5
-15 -20 -25
S11 S22
0 0 500 1000 1500 2000 2500 3000 Frequency (MHz)
-30 0 500 1000 1500
2000
2500
3000
Frequency (MHz)
S-Parameters (VD = +5 V, ID = 150 mA, T = 25 qC, calibrated to device leads)
Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)
50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000
-2.65 -7.97 -8.57 -8.47 -8.24 -7.79 -7.18 -6.55 -6.03 -5.69 -5.55 -5.68 -5.86
-29.52 -44.15 -60.61 -80.72 -100.99 -120.81 -138.15 -152.70 -164.30 -173.54 176.22 166.67 153.06
17.80 15.28 14.91 14.60 14.22 13.80 13.27 12.69 12.11 11.57 11.12 10.76 10.40
164.25 158.50 147.54 134.66 121.38 108.59 96.13 84.26 73.25 62.88 52.70 42.57 31.81
-24.29 -21.31 -21.11 -21.11 -21.21 -21.21 -21.41 -21.62 -21.83 -21.99 -22.10 -22.16 -22.27
45.18 6.75 -3.83 -10.90 -17.00 -23.01 -28.54 -33.67 -38.35 -42.48 -46.41 -50.57 -55.21
-8.25 -19.01 -25.15 -29.26 -30.76 -29.83 -29.30 -29.12 -28.24 -26.58 -25.60 -26.12 -29.48
-39.80 -65.37 -69.25 -84.69 -115.12 -88.78 -94.19 -136.07 -112.00 -97.44 -90.19 -87.80 -82.67
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice. WJ Communications, Inc
x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x
Web site: www.wj.com
Page 2 of 5 April 2007
AH1
High Dynamic Range Amplifier
Application Circuit: 800 - 2500 MHz (AH1-PCB)
Vcc = +5 V
Typical RF Performance at 25 qC
Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3
(+5 dBm / tone, 10 MHz spacing)
ID=C5 C=56 pF All passive components are of size 0603 unless otherwise noted. Component C1 is shown in the silkscreen but is not used for this configuration. ID=C2 C=56 pF Z0=22 Ohm EL=15.2 Deg F0=0.9 GHz ID=Q1 NET="AH1" ID=C4 L=12 nH
MHz 900 1900 2140 dB 14.2 12.2 12.0 dB -21 -14 -21 dB -14 -13 -11 dBm +21.7 +22 +22 dBm +42 +41 +40
ID=C6 C=56 pF ID=C3 L=5.6 nH
IS-95 Channel Power
(@-45 dBc ACPR, 9 channels fwd)
dBm +15.5 +16.5 dB 3.2 3.3 3.3 +5V @ 150mA
Noise Figure Device Bias
Circuit Board Material: .062" total thickness with a .014" FR-4 top RF layer, 4 layers (other layers added for rigidity), 1 oz copper, 50: Microstrip line details: width = .025".
Gain
Return Loss
15 14 13 12 11 10 750 1000 1250 1500 1750 2000 2250 Frequency (MHz)
0 -5
Gain (dB)
Gain and Output IP3 vs. Temperature
Frequency = 800, 801 MHz @ Pout =5dBm
15 14 13 12 11 Gain OIP3 10
45
-10 -15 -20 -25 -30 750 1000 1250 1500
S11 S22
43 42 41 40 -40 -15 10 35 60 85
Temperature (oC)
1750
2000
2250
Frequency (MHz)
ACPR vs. Channel Power
ACPR vs. Channel Power -40
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 1900 MHz
-40
IS-95, 9 Ch. Fwd, 885 kHz offset, 30 kHz Meas BW, 900 MHz
P1dB and Noise Figure vs. Temperature
23
P1dB (dBm)
Frequency = 800 MHz
4 3 2
P1dB NF
-50
-50
22 21 20 19
-60
-60
1 0
-70 10 11 12 13 14 15 16 17
-70 10 11 12 13 14 15 16 17 Output Channel Power (dBm)
-40
-15
10
35
Output Channel Power (dBm)
Temperature ( C)
o
60
85
Specifications and information are subject to change without notice. WJ Communications, Inc
x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x
Web site: www.wj.com
Page 3 of 5 April 2007
Noise Figure (dB)
Output IP3 (dBm)
44
AH1
High Dynamic Range Amplifier
250 - 650 MHz Reference Design
Gain / Return Loss
Freq. Gain S11 S22 P1dB OIP3 NF Bias
MHz dB dB dB dBm dBm dB
G ain (dB)
14
-10
S 11, S22 (s B)
250 14.8 -10 -19
450 650 14.5 13.8 -36 -11 -17 -13 +22 +42 2.8 2.8 3.2 +5V @ 150mA
16
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
0
+5V
15
-5
C=1000 pF
L=82 nH NET="AH1" L=15 nH C=1000 pF
13
-15
12
-20
11 0.2 0.3 0.4 0.5 Frequency (GHz) 0.6 0.7
-25
900 MHz Reference Design
+5 V
Freq. Gain S11 S22 P1dB OIP3 NF Bias
MHz dB dB dB dBm dBm dB
S11, S 22 (dB)
800 13.7 -13 -13
900 1000 13.7 13.6 -16 -18 -14 -15 +22 +41 2.5 +5V @ 150mA
Gain / Return Loss
15 0
C=100 pF
DB(|S(2,1)|) (L)
14
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
-5
L=100 nH
G ain (dB )
13
-10
C=100 pF
NET="AH1"
C=100 pF
12
-15
11
-20
L=12 nH
10 0.7 0.8 0.9 Frequency (GHz) 1 1.1
-25
2350 MHz Reference Design
Gain / Return Loss
13 0
DB(|S(2,1)|) (L) DB(|S(1,1)|) (R) DB(|S(2,2)|) (R)
+5V C=56 pF
Freq. Gain S11 S22 P1dB OIP3 NF Bias
GHz dB dB dB dBm dBm dB
G ain (dB)
11
-10
S 11, S 22 (sB)
2.3 12.0 -24 -12
2.35 2.4 12.0 11.9 -40 -25 -13 -14 +22 +41 3.7 +5V @ 150mA
12
-5
TLINP Z0=50 Ohm L=250 mil Eeff=3.4 Loss=0 F0=0 GHz L=22 nH NET="AH1"
C=56 pF
10
-15
9
-20
C=1.2 pF
8 2.1 2.2 2.3 2.4 Frequency (GHz) 2.5 2.6
-25
3500 MHz Reference Design
Gain / Return Loss
Freq. Gain S11 S22 P1dB OIP3 NF Bias
GHz dB dB dB dBm dBm dB
3.5 3.8 9.9 9.5 -18 -14 -17 -16 +21.6 +41 4.8 4.3 4.1 +5V @ 150mA
S11, S22, (dB)
G ain (dB)
3.3 9.8 -10 -16
11
0
+5V C=18 pF
DB(|S(1,1)|) (R)
10
DB(|S(2,2)|) (R)
DB(|S(2,1)|) (L)
-5
TLINP Z0=80 Ohm L=50 mil Eeff=3.4 Loss=0 F0=0 GHz L=12 nH NET="AH1"
9
-10
C=18 pF
8
-15
7
-20
C=1 pF
6 3 3.2 3.4 3.6 Frequency (GHz) 3.8 4
-25
Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 4 of 5 April 2007
AH1
High Dynamic Range Amplifier
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 qC reflow temperature) and leaded (maximum 245 qC reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
AH1-G (Green / Lead-free SOT-89 Package) Mechanical Information
Outline Drawing
Product Marking
The AH1-G will be marked with an "AH1G" designator. An alphanumeric lot code ("XXXX-X") is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an "AH1" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
MSL / ESD Rating Land Pattern
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101
500V
1000V
MSL Rating: Level 3 at +260 qC convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2) -40 to +85 qC 59 qC / W 129 qC
MTTF vs. GND Tab Temperature 1000
MTTF (million hrs)
Rating
100
1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 qC case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 qC.
10
1 60 70 80 90 100 Tab Temperature (C) 110
Specifications and information are subject to change without notice. WJ Communications, Inc x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com Page 5 of 5 April 2007

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